SiCrystal Expands German Plant, Triples Silicon Carbide Wafer Production

SiCrystal GmbH, a global leader in single-crystal silicon carbide (SiC) semiconductor wafers, plays a pivotal role in enabling cutting-edge electronic components across industries like electromobility and green technologies such as photovoltaics and wind power.

In a significant move to bolster the semiconductor sector and advance sustainable technologies, SiCrystal GmbH is set to expand its footprint in Nuremberg's northeast. This expansion involves constructing a new facility directly opposite its current site, adding 6,000 square meters of advanced production space. Equipped with state-of-the-art technology, the new building aims to enhance the efficiency of silicon carbide wafer production. Its strategic proximity to the existing plant will ensure seamless integration of production processes.

Dr. Robert Eckstein, Managing Director of SiCrystal, highlighted the significance of the new production area for SiC substrates, noting its substantial capacity increase. He emphasized the honor of welcoming Mayor König to the groundbreaking ceremony, underscoring the project's importance for both the city and the region. The expansion underscores SiCrystal's commitment to advancing technological capabilities and supporting local economic growth through significant infrastructure investments.

Dr. Erwin Schmitt, COO of SiCrystal, articulated the groundbreaking ceremony's importance as a transformative milestone for the company. He underscored SiCrystal's dedication to the metropolitan region, emphasizing that the expansion will enable them to consistently deliver cutting-edge products of the highest caliber to their global clientele. Schmitt emphasized the company's commitment to sustainability, highlighting how the increased production capacities will support their efforts in meeting environmental goals. He expressed confidence that these advancements will not only strengthen SiCrystal's market position but also drive significant progress in technological innovation within the semiconductor industry, solidifying their leadership role in the field.

By 2027, SiCrystal's total production capacity, inclusive of the new facility, is projected to triple compared to 2024, reinforcing its commitment to innovation and meeting the growing global demand for high-performance semiconductor solutions.

Construction for the new facility, scheduled for completion by early 2026, represents a significant opportunity for job creation in the region. Systeambau from Hilpoltstein has been enlisted as the general contractor for this collaborative effort.

SiCrystal, a subsidiary of Japan's ROHM Group, specializes in producing SiC wafers crucial for high-performance semiconductor manufacturing. SiC technology enhances efficiency, lowers energy consumption, and improves performance in electric vehicles, solar energy systems, and industrial equipment.

In line with its growth strategy, SiCrystal plans a substantial workforce expansion, targeting the addition of more than 100 jobs by the end of the 2027/28 fiscal year. This initiative aims to strengthen SiCrystal's position as a leading employer in the metropolitan area, supporting both technological advancement and regional economic development.